Electronics for Telecommunications
Research Laboratory
Electronics for Telecommunications
Research Laboratory
Embedded Files
Research Laboratory
ELECTRON DEVICE NONLINEAR MODELLING
The main objective of this research theme is the development of large-signal electron device models for use in the CAD of nonlinear microwave circuits (e.g., amplifiers, oscillators, mixers, etc.). Both equivalent circuit models and black-box (look-up-table-based) models have been proposed.
In this context, dispersive effects caused by thermal phenomena, surface state densities, or deep-level traps in III-V FETs (GaAs and GaN) have been extensively addressed. From a macroscopic point of view, they cause important and non-negligible deviations between static and dynamic I/V characteristics. Various dispersive I/V models have been developed and successfully applied to describe the dynamic deviations of the drain current. Additionally, the significant impact of dispersive model accuracy on large-signal performance prediction has been highlighted. These dispersive I/V models have been implemented in both black-box and conventional equivalent circuit frameworks.
Regarding the modeling of millimeter-wave electron devices and high-power devices ("power bars"), several distributed modeling approaches have been developed. These approaches leverage not only conventional measurements but also accurate electromagnetic simulations of the device layout. The scaling properties and robust extrapolation capabilities of the proposed models have been thoroughly demonstrated.
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